International Patent: SIMULATION MODELING METHOD AND SYSTEM FOR REAL-TIME MODEL OF SILICON CARBIDE IGBT MODULE

GENEVA, Aug. 31 -- ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID filed a patent application (CN2025/142508) for “SIMULATION MODELING METHOD AND SYSTEM FOR REAL-TIME MODEL OF SILICON CARBIDE IGBT MODULE”. With publication no. WO/2026/174913, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: G06F 30/367

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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