GENEVA, June 19 -- SHANGHAI IC R&D CENTER CO., LTD. filed a patent application (CN2025/134465) for “SIMULATION MODEL BUILDING METHOD AND WAFER SCRATCH SIMULATION METHOD”. With publication no. WO/2026/103752, here are the other details related to the patent application:
Kind: Initial Publication with ISR [A1]
IPC: G06F 30/20
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
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