International Patent: SILICON WAFER PROCESSING METHOD, SILICON WAFER WITH TEXTURED SURFACE FORMED ON SINGLE SIDE SURFACE, AND SOLAR CELL

GENEVA, June 26 -- ANHUI HUASUN ENERGY CO., LTD. filed a patent application (CN2025/140499) for “SILICON WAFER PROCESSING METHOD, SILICON WAFER WITH TEXTURED SURFACE FORMED ON SINGLE SIDE SURFACE, AND SOLAR CELL”. With publication no. WO/2026/119293, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10F 71/00

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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