International Patent: SILICON-ON-INSULATOR (SOI) REPLACEMENT FOR 4F2 DRAM USING SACRIFICIAL SILICON GERMANIUM AND BOTTOM-UP DIELECTRIC

GENEVA, Oct. 5 -- APPLIED MATERIALS, INC. filed a patent application (US2025/051536) for “SILICON-ON-INSULATOR (SOI) REPLACEMENT FOR 4F2 DRAM USING SACRIFICIAL SILICON GERMANIUM AND BOTTOM-UP DIELECTRIC”. With publication no. WO/2026/206391, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10B 12/00

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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