International Patent: SILICON NITRIDE SUBSTRATE MANUFACTURING METHOD AND SILICON NITRIDE SUBSTRATE

GENEVA, Aug. 7 -- JSG JAPAN CO., LTD. filed a patent application (JP2025/003265) for “SILICON NITRIDE SUBSTRATE MANUFACTURING METHOD AND SILICON NITRIDE SUBSTRATE”. With publication no. WO/2026/163386, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C04B 35/591

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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