International Patent: SIC SINGLE CRYSTAL, SIC SUBSTRATE, SIC BOULE, SIC EPITAXIAL WAFER, METHOD FOR PRODUCING SIC BOULE, METHOD FOR PRODUCING SIC SUBSTRATE, METHOD FOR PRODUCING SIC EPITAXIAL WAFER, AND METHOD FOR PRODUCING SIC DEVICE

GENEVA, Sept. 7 -- RESONAC CORPORATION filed a patent application (JP2026/007529) for “SIC SINGLE CRYSTAL, SIC SUBSTRATE, SIC BOULE, SIC EPITAXIAL WAFER, METHOD FOR PRODUCING SIC BOULE, METHOD FOR PRODUCING SIC SUBSTRATE, METHOD FOR PRODUCING SIC EPITAXIAL WAFER, AND METHOD FOR PRODUCING SIC DEVICE”. With publication no. WO/2026/182240, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C30B 29/36

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Disclaimer: Curated by HT Syndication....