International Patent: SIC COMPOSITE SUBSTRATE, SIC EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

GENEVA, July 6 -- RESONAC CORPORATION filed a patent application (JP2024/046418) for “SIC COMPOSITE SUBSTRATE, SIC EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER”. With publication no. WO/2026/140230, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H01L 21/02

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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