GENEVA, April 28 -- SHIN-ETSU HANDOTAI CO., LTD. (2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo1000004), 信越半導体株式会社 (東京都千代田区大手町二丁目２番１号) filed a patent application (PCT/JP2025/030422) for "SUBSTRATE HAVING SIGE LAYER ON SILICON SUBSTRATE AND METHOD FOR PRODUCING SAME" on Aug 29, 2025. With publication no. WO/2026/083713, the details related to the patent application was published on Apr 23, 2026.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (W...