INTERNATIONAL PATENT: SANDISK TECHNOLOGIES, INC. FILES APPLICATION FOR "DOUBLE MAGNETIC TUNNEL JUNCTION MAGNETORESISTIVE MEMORY DEVICE AND METHOD OF MAKING THEREOF"

GENEVA, March 24 -- SANDISK TECHNOLOGIES, INC. (951 Sandisk DriveMilpitas, California 95035) filed a patent application (PCT/US2025/026548) for "DOUBLE MAGNETIC TUNNEL JUNCTION MAGNETORESISTIVE MEMORY DEVICE AND METHOD OF MAKING THEREOF" on Apr 25, 2025. With publication no. WO/2026/059616, the details related to the patent application was published on Mar 19, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): JUNG, Wonjoon (c/o Sandisk Technologies, Inc.951 Sandisk DriveMilpitas, California 95035), MIHAJLOVIC, Goran (c/o Sandisk Technologies, Inc.951 Sandisk DriveMilpitas, California 95035), C...