INTERNATIONAL PATENT: QUALCOMM INCORPORATED FILES APPLICATION FOR "SEMICONDUCTOR DIE INCLUDING A TRANSISTOR COUPLED TO A CONTACT LAYER WHEREIN THE CONTACT LAYER INCLUDES A METAL CONTACT HAVING A SIDEWALL WITH A REDUCED HEIGHT TO PROMOTE CONNECTIVITY WITH AN ADJACENT VIA"

GENEVA, April 8 -- QUALCOMM INCORPORATED (ATTN: International IP Administration5775 Morehouse DriveSan Diego, California 92121-1714) filed a patent application (PCT/US2025/045733) for "SEMICONDUCTOR DIE INCLUDING A TRANSISTOR COUPLED TO A CONTACT LAYER WHEREIN THE CONTACT LAYER INCLUDES A METAL CONTACT HAVING A SIDEWALL WITH A REDUCED HEIGHT TO PROMOTE CONNECTIVITY WITH AN ADJACENT VIA" on Sep 10, 2025. With publication no. WO/2026/072319, the details related to the patent application was published on Apr 02, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): BAO, Junjing (5775 Morehouse DriveS...