International Patent: PREPARATION METHODS FOR TWO-DIMENSIONAL TIN-BASED PEROVSKITE MICROCRYSTAL, THIN FILM, AND LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE PREPARED THEREBY

GENEVA, Sept. 24 -- SHENZHEN UNIVERSITY OF ADVANCED TECHNOLOGY filed a patent application (CN2025/083842) for “PREPARATION METHODS FOR TWO-DIMENSIONAL TIN-BASED PEROVSKITE MICROCRYSTAL, THIN FILM, AND LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE PREPARED THEREBY”. With publication no. WO/2026/193836, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C07C 209/68

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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