INTERNATIONAL PATENT: PRAXAIR TECHNOLOGY, INC. FILES APPLICATION FOR "METHODS FOR GAS PHASE SELECTIVE ETCHING OF SILICON OVER SILICON-GERMANIUM LAYERS"

GENEVA, May 12 -- PRAXAIR TECHNOLOGY, INC. (10 Riverview DriveDanbury, CT 06810) filed a patent application (PCT/US2025/046777) for "METHODS FOR GAS PHASE SELECTIVE ETCHING OF SILICON OVER SILICON-GERMANIUM LAYERS" on Sep 17, 2025. With publication no. WO/2026/096102, the details related to the patent application was published on May 07, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): PECK, John, D. (175 East Park DriveTonawanda, NY 14150), RAHMAN, Mohammad, M. (175 East Park DriveTonawanda, NY 14150), MA, Ce (175 East Park DriveTonawanda, NY 14150), BYL, Oleg (175 East Park DriveTonawanda, ...