INTERNATIONAL PATENT: NEXPERIA B.V., NEXPERIA TECHNOLOGY (SHANGHAI) LTD. FILES APPLICATION FOR "METHOD OF MANUFACTURING A SPLIT GATE TRENCH MOSFET WITH IMPROVED RUGGEDNESS AGAINST FABRICATION INCONSISTENCY AND SPLIT GATE TRENCH MOSFET WITH IMPROVED RUGGEDNESS AGAINST FABRICATION INCONSISTENCY"

GENEVA, April 4 -- NEXPERIA B.V. (Jonkerbosplein 52, 6534 AB, Nijmegen), NEXPERIA TECHNOLOGY (SHANGHAI) LTD. (Room 201, No. 458 Jumen RoadHuangpu District, Shanghai 200025) filed a patent application (PCT/CN2024/122266) for "METHOD OF MANUFACTURING A SPLIT GATE TRENCH MOSFET WITH IMPROVED RUGGEDNESS AGAINST FABRICATION INCONSISTENCY AND SPLIT GATE TRENCH MOSFET WITH IMPROVED RUGGEDNESS AGAINST FABRICATION INCONSISTENCY" on Sep 29, 2024. With publication no. WO/2026/065226, the details related to the patent application was published on Apr 02, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): Y...