International Patent: MODULAR MOS TRANSISTOR LAYOUT STRUCTURE HAVING STANDARD CELL, AND USAGE METHOD

GENEVA, July 6 -- NINGBO QINGYUN CHUANGXIN TECHNOLOGY CO., LTD. filed a patent application (CN2025/131818) for “MODULAR MOS TRANSISTOR LAYOUT STRUCTURE HAVING STANDARD CELL, AND USAGE METHOD”. With publication no. WO/2026/138168, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: G06F 30/392

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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