INTERNATIONAL PATENT: MICROCHIP TECHNOLOGY INCORPORATED FILES APPLICATION FOR "SIC FET WITH PROTON DOPING TO REDUCE INTERFACE DEFECTS"

GENEVA, March 18 -- MICROCHIP TECHNOLOGY INCORPORATED (2355 W. Chandler Blvd.Chandler, Arizona 85224) filed a patent application (PCT/US2025/034967) for "SIC FET WITH PROTON DOPING TO REDUCE INTERFACE DEFECTS" on Jun 24, 2025. With publication no. WO/2026/054851, the details related to the patent application was published on Mar 12, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): EL HAGEALI, Sami Alexandre (395 E Allen St, Unit 27Castle Rock, Colorado 80108), PANDEY, Shesh Mani (5265 S Red Rock StreetGilbert, Arizona 85298)

Abstract: A silicon carbide field-effect transistor is doped with p...