INTERNATIONAL PATENT: MICROCHIP TECHNOLOGY INCORPORATED FILES APPLICATION FOR "POWER MOSFET RADIATION HARDENED AGAINST SINGLE-EVENT GATE RUPTURE EFFECT"

GENEVA, April 20 -- MICROCHIP TECHNOLOGY INCORPORATED (2355 W. Chandler Blvd.Chandler, Arizona 85224) filed a patent application (PCT/US2025/048799) for "POWER MOSFET RADIATION HARDENED AGAINST SINGLE-EVENT GATE RUPTURE EFFECT" on Sep 30, 2025. With publication no. WO/2026/080264, the details related to the patent application was published on Apr 16, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): PANDEY, Shesh Mani (5265 S Red Rock StreetGilbert, Arizona 85298)

Abstract: A power metal oxide semiconductor field-effect transistor apparatus that is radiation- hardened against a single-event g...