INTERNATIONAL PATENT: MICROCHIP TECHNOLOGY INCORPORATED FILES APPLICATION FOR "MOSFET WITH LOWER DOPANT CONCENTRATION WELL SECTION AND RADIATION-HARDENING AGAINST SEGR EFFECT"

GENEVA, May 6 -- MICROCHIP TECHNOLOGY INCORPORATED (2355 W. Chandler Blvd.Chandler, Arizona 85224) filed a patent application (PCT/US2025/052290) for "MOSFET WITH LOWER DOPANT CONCENTRATION WELL SECTION AND RADIATION-HARDENING AGAINST SEGR EFFECT" on Oct 23, 2025. With publication no. WO/2026/090431, the details related to the patent application was published on Apr 30, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): PANDEY, Shesh Mani (5265 S Red Rock StreetGilbert, Arizona 85298), SMITH, Joseph Terence (1155 W. Elliot Rd, #2042Tempe, Arizona 85284)

Abstract: A power metal oxide semiconduc...