International Patent: METHOD FOR MANUFACTURING THREE-DIMENSIONAL SEMICONDUCTOR DEVICE USING ATOMIC LAYER ETCHING PROCESS

GENEVA, Oct. 22 -- FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERATION filed a patent application (KR2026/002340) for “METHOD FOR MANUFACTURING THREE-DIMENSIONAL SEMICONDUCTOR DEVICE USING ATOMIC LAYER ETCHING PROCESS”. With publication no. WO/2026/221240, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10D 1/00

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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