International Patent: METALLIC GLASS APPLIED TO GATE ELECTRODE LAYER OF VERTICAL NON-VOLATILE MEMORY DEVICE, AND SEMICONDUCTOR DEVICE COMPRISING SAME

GENEVA, Oct. 22 -- INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY filed a patent application (KR2025/022699) for “METALLIC GLASS APPLIED TO GATE ELECTRODE LAYER OF VERTICAL NON-VOLATILE MEMORY DEVICE, AND SEMICONDUCTOR DEVICE COMPRISING SAME”. With publication no. WO/2026/221204, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10B 43/35

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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