GENEVA, July 6 -- UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA filed a patent application (CN2025/142020) for “METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR”. With publication no. WO/2026/138535, here are the other details related to the patent application:
Kind: Initial Publication with ISR [A1]
IPC: H10D 30/65
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
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