International Patent: LOW-INDUCTANCE SILICON CARBIDE POWER MODULE AND COMMUTATION LOOP STRUCTURE

GENEVA, July 9 -- XI'AN JIAOTONG UNIVERSITY filed a patent application (CN2025/096862) for “LOW-INDUCTANCE SILICON CARBIDE POWER MODULE AND COMMUTATION LOOP STRUCTURE”. With publication no. WO/2026/143965, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H01L 23/52

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Disclaimer: Curated by HT Syndication....