INTERNATIONAL PATENT: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), 한양대학교 산학협력단 FILES APPLICATION FOR "METHOD FOR MANUFACTURING INDIUM-BASED COMPOSITE OXIDE SEMICONDUCTOR LAYER HAVING PREFERENTIALLY ORIENTED CRYSTALLINITY AND THIN-FILM TRANSISTOR INCLUDING IN- BASED COMPOSITE OXIDE SEMICONDUCTOR LAYER"

GENEVA, April 28 -- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (222, Wangsimni-roSeongdong-guSeoul 04763), 한양대학교 산학협력단 (서울특별시성동구왕십리로 222) filed a patent application (PCT/KR2025/009108) for "METHOD FOR MANUFACTURING INDIUM-BASED COMPOSITE OXIDE SEMICONDUCTOR LAYER HAVING PREFERENTIALLY ORIENTED CRYSTALLINITY, AND THIN-FILM TRANSISTOR INCLUDING IN- BASED COMPOSITE OXIDE SEMICONDUCTOR LAYER" on Jun 27, 2025. With publication no. WO/2026/084176, the details related to the patent application was published on Apr 23, 2026.

Notably, the patent application was submit...