INTERNATIONAL PATENT: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, 中国科学院微电子研究所 FILES APPLICATION FOR "UNIDIRECTIONAL WRITE MAGNETOELECTRIC COUPLED MAGNETIC MEMORY, MANUFACTURING METHOD AND ARRAY CONNECTION CIRCUIT OF MAGNETIC MEMORY"

GENEVA, March 8 -- INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (No.3 Beitucheng West RoadChaoyang District, Beijing 100029), 中国科学院微电子研究所 (中国北京市朝阳区北土城西路3号) filed a patent application (PCT/CN2024/115454) for "UNIDIRECTIONAL WRITE MAGNETOELECTRIC COUPLED MAGNETIC MEMORY, MANUFACTURING METHOD, AND ARRAY CONNECTION CIRCUIT OF MAGNETIC MEMORY" on Aug 29, 2024. With publication no. WO/2026/044578, the details related to the patent application was published on Mar 05, 2026.

Notably, the patent application was submitted under the International Patent Classificat...