INTERNATIONAL PATENT: INFINEON TECHNOLOGIES LLC FILES APPLICATION FOR "METHOD OF INTEGRATION OF NON-VOLATILE MEMORY DEVICE HAVING VERTICAL CHANNELS FORMATION INTO CMOS FLOW"

GENEVA, April 14 -- INFINEON TECHNOLOGIES LLC (198 Champion CourtSan Jose, California 95134) filed a patent application (PCT/US2025/047775) for "METHOD OF INTEGRATION OF NON-VOLATILE MEMORY DEVICE HAVING VERTICAL CHANNELS FORMATION INTO CMOS FLOW" on Sep 24, 2025. With publication no. WO/2026/075858, the details related to the patent application was published on Apr 09, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ZHANG, Yanli (1143 Whitemarsh Ct.San Jose, California 95120), SHETTY, Shivananda (360 Camphor AveFremont, California 94539), PAK, James (621 Santa Catalina Ter.Sunnyvale, Califo...