INTERNATIONAL PATENT: HITACHI ENERGY LTD FILES APPLICATION FOR "METHOD FOR PRODUCING A FIRST CONTACT LAYER AND A SECOND CONTACT LAYER ON A POWER SEMICONDUCTOR BODY AND POWER SEMICONDUCTOR DEVICE"

GENEVA, April 5 -- HITACHI ENERGY LTD (Brown-Boveri-Strasse 58050 Zurich) filed a patent application (PCT/EP2025/067867) for "METHOD FOR PRODUCING A FIRST CONTACT LAYER AND A SECOND CONTACT LAYER ON A POWER SEMICONDUCTOR BODY, AND POWER SEMICONDUCTOR DEVICE" on Jun 25, 2025. With publication no. WO/2026/068026, the details related to the patent application was published on Apr 02, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ALFIERI, Giovanni (Gugelweg 295103 Moriken), POCATERRA, Marco Pietro Marcello (Hermenweg 15603 Staufen), BOLAT, Sami (Luzernerstrasse 17E5630 Muri), FERNANDEZ, Stepha...