INTERNATIONAL PATENT: FUDAN UNIVERSITY, 复旦大学, JIASHAN FUDAN INSTITUTE, 嘉善复旦研究院 FILES APPLICATION FOR "GATE-ALL-AROUND TRANSISTOR USING HEAVILY DOPED SUBSTRATE SOURCE REGION, ELECTRONIC DEVICE AND PREPARATION METHOD"

Posted On: 2026-01-17

GENEVA, Jan. 17 -- FUDAN UNIVERSITY (No. 220 Handan RoadYangpu District, Shanghai 200433), 复旦大学 (中国上海市杨浦区邯郸路220号), JIASHAN FUDAN INSTITUTE (A-4, Yingxinda Science And Technology Innovation Park Phase II, No. 8 Xinda Road, Huimin Street, Jiashan CountyJiaxing, Zhejiang 314100), 嘉善复旦研究院 (中国浙江省嘉兴市嘉善县惠民街道鑫达路8号英鑫达科创园二期A-4) filed a patent application (PCT/CN2024/105131) for "GATE-ALL-AROUND TRANSISTOR U...

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इस लेख के रीप्रिंट को खरीदने या इस प्रकाशन का पूरा फ़ीड प्राप्त करने के लिए, कृपया हमे संपर्क करें.

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INTERNATIONAL PATENT: FUDAN UNIVERSITY, 复旦大学, JIASHAN FUDAN INSTITUTE, 嘉善复旦研究院 FILES APPLICATION FOR "GATE-ALL-AROUND TRANSISTOR USING HEAVILY DOPED SUBSTRATE SOURCE REGION, ELECTRONIC DEVICE AND PREPARATION METHOD"