International Patent: FIELD EFFECT TRANSISTOR HAVING A GATE OXIDE WITH A LOW DIELECTRIC CONSTANT

GENEVA, Sept. 24 -- MICROCHIP TECHNOLOGY INCORPORATED filed a patent application (US2026/018543) for “FIELD EFFECT TRANSISTOR HAVING A GATE OXIDE WITH A LOW DIELECTRIC CONSTANT”. With publication no. WO/2026/198281, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: H10D 30/66

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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