GENEVA, July 2 -- NTT, INC. filed a patent application (JP2024/044600) for “FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME”. With publication no. WO/2026/133421, here are the other details related to the patent application:
Kind: Initial Publication with ISR [A1]
IPC: H10D 30/47
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
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