International Patent: DEPOSITION OF SILICON OXIDE IN TRENCHES

GENEVA, Aug. 14 -- LAM RESEARCH CORPORATION filed a patent application (US2025/014880) for “DEPOSITION OF SILICON OXIDE IN TRENCHES”. With publication no. WO/2026/169243, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C23C 16/04

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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