INTERNATIONAL PATENT: BEIJING LATTICE SEMICONDUCTOR CO., LTD., 北京晶格领域半导体有限公司 FILES APPLICATION FOR "DEVICE AND METHOD FOR RAPID GROWTH OF LARGE-SIZE HIGH-QUALITY SILICON CARBIDE SINGLE CRYSTALS"

GENEVA, May 9 -- BEIJING LATTICE SEMICONDUCTOR CO., LTD. (No. 1, Linkong 2nd Road, Shunyi Park, Zhongguancun Science and Technology ParkShunyi District, Beijing 101300), 北京晶格领域半导体有限公司 (中国北京市顺义区中关村科技园区顺义区临空二路1号) filed a patent application (PCT/CN2025/122441) for "DEVICE AND METHOD FOR RAPID GROWTH OF LARGE-SIZE HIGH-QUALITY SILICON CARBIDE SINGLE CRYSTALS" on Sep 19, 2025. With publication no. WO/2026/091962, the details related to the patent application was published on May 07, 2026.

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