International Patent: APPARATUS FOR ABSORBING RESIDUAL SILICON, APPARATUS FOR GROWING SILICON INGOT WITH SAME, AND METHOD FOR REMOVING RESIDUAL SILICON FROM CRUCIBLE

GENEVA, July 31 -- HANWHA SOLUTIONS CORPORATION filed a patent application (KR2025/020926) for “APPARATUS FOR ABSORBING RESIDUAL SILICON, APPARATUS FOR GROWING SILICON INGOT WITH SAME, AND METHOD FOR REMOVING RESIDUAL SILICON FROM CRUCIBLE”. With publication no. WO/2026/160607, here are the other details related to the patent application:

Kind: Initial Publication with ISR [A1]

IPC: C30B 15/00

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Disclaimer: Curated by HT Syndication....