US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 12 for "Gate profile modulation for semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,401, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Gate profile modulation for semic... Read More

US Patent Issued to NANYA TECHNOLOGY on May 12 for "Semiconductor device with spacer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,402, issued on May 12, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with spacer and method for fa... Read More

US Patent Issued to NANYA TECHNOLOGY on May 12 for "Method of forming semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,403, issued on May 12, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method of forming semiconductor structure" was inv... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 12 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,404, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Taehun M... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Performance optimization by sizing gates and source/drain contacts differently for different transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,406, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan). "Performance optimization by sizing g... Read More

US Patent Issued to XIAMEN SAN'AN INTEGRATED CIRCUIT on May 12 for "Radio frequency device and radio frequency front-end apparatus" (Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,407, issued on May 12, was assigned to XIAMEN SAN'AN INTEGRATED CIRCUIT Co. LTD. (Xiamen, China). "Radio frequency device and radio frequenc... Read More

US Patent Issued to Renesas Electronics on May 12 for "Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,408, issued on May 12, was assigned to Renesas Electronics Corp. (Tokyo). "Metal film and manufacturing method of the metal film, and semico... Read More

US Patent Issued to International Business Machines on May 12 for "Non-shared metal gate integration for scaled gate all around (GAA) transistors" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,410, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Non-shared metal gate integration for scaled g... Read More

US Patent Issued to Tokyo Electron on May 12 for "Method of forming confined growth S/D contact defined by sidewall constraints with selective deposition of inner spacer for CFET" (New York Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,411, issued on May 12, was assigned to Tokyo Electron Ltd. (Tokyo). "Method of forming confined growth S/D contact defined by sidewall const... Read More

US Patent Issued to Vanguard International Semiconductor on May 12 for "Semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,413, issued on May 12, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "Semiconductor device" was invented by ... Read More

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