US Patent Issued to NANYA TECHNOLOGY on April 21 for "Semiconductor device having trench capacitors formed on channel structures and methods for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,531, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device having trench capacitors ... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,532, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for ma... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, method for manufacturing same, and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,533, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure, method for manuf... Read More

US Patent Issued to NANYA TECHNOLOGY on April 21 for "Memory device with air gap and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,534, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory device with air gap and method for prep... Read More

US Patent Issued to NANYA TECHNOLOGY on April 21 for "Semiconductor structure including a bit line structure and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,535, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure including a bit line s... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and fabrication method" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,536, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and fabrication m... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure with buffer layer between conductive contact and word line and method for forming the same, and memory" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,537, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure with buffer layer... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,538, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for fo... Read More

US Patent Issued to ICLEAGUE TECHNOLOGY on April 21 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,539, issued on April 21, was assigned to ICLEAGUE TECHNOLOGY Co. LTD. (Jiaxing, China). "Semiconductor structure and method for forming se... Read More

US Patent Issued to CHENGDU PBM TECHNOLOGY on April 21 for "Methods of manufacturing 3D programmable memory devices" (California Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,540, issued on April 21, was assigned to CHENGDU PBM TECHNOLOGY LTD. (Chengdu, China). "Methods of manufacturing 3D programmable memory de... Read More

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