US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Method for forming a crystalline protective polysilicon layer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,298, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method for forming a crystalline pr... Read More

US Patent Issued to Vishay Siliconix on June 16 for "MOSFET device" (California Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,299, issued on June 16, was assigned to Vishay Siliconix LLC (San Jose, Calif.). "MOSFET device" was invented by Ayman Shibib (San Jose, Ca... Read More

US Patent Issued to Monolithic Power Systems on June 16 for "Semiconductor device with integrated junction field effect transistor and associated manufacturing method" (California Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,300, issued on June 16, was assigned to Monolithic Power Systems Inc. (Kirkland, Wash.). "Semiconductor device with integrated junction fie... Read More

US Patent Issued to XIAMEN SAN'AN INTEGRATED CIRCUIT on June 16 for "Silicon carbide metal oxide semiconductor field effect transistor device" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,301, issued on June 16, was assigned to XIAMEN SAN'AN INTEGRATED CIRCUIT Co. LTD. (Xiamen Fujian, China). "Silicon carbide metal oxide semi... Read More

US Patent Issued to DB HiTek on June 16 for "Semiconductor device including MOSFET region and diode region and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,302, issued on June 16, was assigned to DB HiTek Co. Ltd. (Bucheon, South Korea). "Semiconductor device including MOSFET region and diode r... Read More

US Patent Issued to Infineon Technologies on June 16 for "High current power module package with linear operation capabilities and sensing capabilities" (German, French Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,303, issued on June 16, was assigned to Infineon Technologies AG (Neubiberg, Germany). "High current power module package with linear opera... Read More

US Patent Issued to Intel on June 16 for "Transistors with doped intrinsic germanium caps on source drain regions for improved contact resistance" (American, Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,304, issued on June 16, was assigned to Intel Corp. (Santa Clara, Calif.). "Transistors with doped intrinsic germanium caps on source drain... Read More

US Patent Issued to Nexperia, Nexperia Technology (Shanghai) on June 16 for "Reference voltage circuit" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,305, issued on June 16, was assigned to Nexperia B.V. (Nijmegen, Netherlands) and Nexperia Technology (Shanghai) Ltd. (Shanghai). "Referenc... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Semiconductor device with gate isolation structure" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,306, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device with gate isolation str... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,307, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device and method of fabricati... Read More

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