US Patent Issued to Intel on June 16 for "Transistors with doped intrinsic germanium caps on source drain regions for improved contact resistance" (American, Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,304, issued on June 16, was assigned to Intel Corp. (Santa Clara, Calif.).

"Transistors with doped intrinsic germanium caps on source drain regions for improved contact resistance" was invented by Cory C. Bomberger (Portland, Ore.), Nicholas Minutillo (Beaverton, Ore.), Ryan Cory Haislmaier (Albuquerque, N.M.), Yulia Tolstova (Hillsboro, Ore.), Yoon Jung Chang (Hillsboro, Ore.), Tahir Ghani (Portland, Ore.), Szuya S. Liao (Zhubei City, Taiwan), Anand Murthy (Portland, Ore.) and Pratik Patel (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) structure, an IC device, an IC device assembly, and a method of forming...