Japan, May 27 -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed a technology for trench-gate silicon carbide (SiC) MOSFETs, a power semiconductor that reduces losses (on-resistance) while enhancing short-circuit robustness. The technology optimizes a bottom p-well structure formed under the trench and the design of the junction field-effect transistor (JFET) region within it, including its width and doping concentration.Toshiba has confirmed that the new technology suppresses short-circuit energy generated inside the device and reduces temperature rises, achieving improved short-circuit robustness and lower loss while maintaining gate oxide reliability. These advances are expected to contribute to improved device...