Japan, June 12 -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed silicon carbide (SiC) power module technology for high-frequency inverter applications that delivers lower power loss and higher reliability. The technology combines Toshiba's proprietary Schottky barrier diode (SBD) embedded SiC MOSFET with an optimized module design to realize high reliability and low loss operation during high-speed switching. Simulation results indicate that, under high-frequency inverter operation at 60kHz, total inverter power loss can be reduced by approximately 30% compared with a module using a conventional SBD-embedded SiC MOSFET structure.The widespread adoption of AI and the increasing sophistication of data centers is f...