Japan, June 23 -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed a 6500V-rated trench-type second-generation Injection Enhanced Gate Transistor (IEGT) chip with high turn-off capability and short-circuit capability. Increasing the voltage rating from the standard 4500V class to 6500V secures a reduction in the number of devices connected in series for the same output voltage, which will help to realize simpler system configurations and smaller power conversion equipment. Toshiba has also commercialized a 6500V press-pack IEGT (PPI) incorporating the chip for use in applications such as DC power transmission systems, STATCOM, and industrial motor drives.The adoption of renewable energy is expanding with efforts wo...