Japan, Sept. 29 -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed a technology that suppresses threshold voltage (Vth) drift during long-term operation in trench-gate silicon carbide (SiC) MOSFETs, a type of power semiconductor device, contributing to improved device reliability. By analyzing the relationship between gate oxide interface treatment conditions and Vth drift and implementing an appropriate gate formation process, Toshiba suppressed the impact of charge traps that contribute to the drift and reduced it by approximately 50% that of commercially available trench-gate SiC MOSFETs. Users require trench-gate SiC MOSFETs that lower power loss. The new technology contributes to higher efficiency and long-te...