Japan Intellectual Property Rights: SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE FOR POWER APPLICATIONS AND MANUFACTURING PROCESS THEREOF

Japan, Aug. 14 -- STMICROELECTRONICS SRL has got intellectual property rights for 'SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE FOR POWER APPLICATIONS AND MANUFACTURING PROCESS THEREOF.' Other related details are as follows:

Application Number: JP,2022-006405

Category (FI): H01L29/78,652@T,H01L29/78,652@B,H01L29/78,652@D,H01L29/78,652@F,H01L29/78,658@A,H01L29/78,652@M,H10D30/01,301@A,H10D30/66,101@B,H10D30/66,101@D,H10D30/66,101@F,H10D30/66,101@T,H10D30/66,102@D,H10D30/66,102@F,H10D30/66,102@S

Stage: Grant (IP right granted following substantive examination.)

Filing Date: Jan. 19, 2022

Publication Date: Aug. 10, 2022

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

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