Japan Intellectual Property Rights: SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Japan, March 23 -- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,FUJI ELECTRIC CO LTD has got intellectual property rights for 'SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2022-012507

Category (FI): H01L21/28,301@S,H01L27/06,102@A,H01L27/088@E,H01L29/48@D,H01L29/48@F,H01L29/48@M,H01L29/48@P,H01L29/78,652@J,H01L29/78,652@M,H01L29/78,652@S,H01L29/78,652@T,H01L29/78,653@A,H01L29/78,657@A,H01L29/78,658@F,H01L29/86,301@D,H01L29/86,301@F,H01L29/86,301@M,H01L29/86,301@P,H10D30/01,301@F,H10D30/66,101@H,H10D30/66,101@T,H10D30/66,102@D,H10D30/66,102@F,H10D30/66,102@S,H10D30/66,103@S,H10D30/66,201@A,H10D64/23@D,...