Japan Intellectual Property Rights: SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SILICON CARBIDE SEMICONDUCTOR DEVICE

Japan, March 26 -- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,SUMITOMO ELECTRIC IND LTD has got intellectual property rights for 'SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SILICON CARBIDE SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2025-009115

Category (FI): H10D12/00,101@H,H10D12/00,101@J,H10D12/00,101@T,H10D12/00,201@A,H10D12/01@E,H10D30/01,301@E,H10D30/66,101@H,H10D30/66,101@J,H10D30/66,101@T,H10D30/66,201@A,H10D8/50,H10D8/50@C,H10D8/50@F,H10D84/80,203@A,H10D84/80,203@D,H10D84/80,203@F

Stage: Grant (IP right granted following substantive examination.)

Filing Date: Jan. 22, 2025

Publication Date: April 15, 2025

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