Japan, Sept. 14 -- POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION has got intellectual property rights for 'METHOD OF PREPARING TELLURIUM OXIDE THIN FILM AND THIN FILM TRANSISTOR USING SPUTTERING.' Other related details are as follows:
Application Number: JP,2025-018133
Category (FI): H01L21/363,H10D30/67,103@B,H10P14/22,H10D30/01,204,H10D30/01,206@F
Stage: Grant (IP right granted following substantive examination.)
Filing Date: Feb. 6, 2025
Publication Date: Aug. 19, 2025
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication....