Japan Intellectual Property Rights: METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Japan, July 27 -- FUJI ELECTRIC CO LTD has got intellectual property rights for 'METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2022-111660

Category (FI): H01L21/20,H10P34/42@F,H10P14/20,H10D8/50@F,H10D8/50@C,H10D8/01@A,H01L21/268@F,H01L29/91@C,H01L29/91@F,H01L29/91@A

Stage: Grant (IP right granted following substantive examination.)

Filing Date: July 12, 2022

Publication Date: Jan. 24, 2024

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication....