Japan, June 10 -- STMICROELECTRONICS SRL has got intellectual property rights for 'METHOD FOR MANUFACTURING SiC WAFER HAVING RESIDUAL STRESS CONTROL.' Other related details are as follows:

Application Number: JP,2021-189317

Category (FI): C30B29/36@A,H10P14/20,H01L21/20,C30B25/18

Stage: Grant (IP right document published.)

Filing Date: Nov. 22, 2021

Publication Date: June 8, 2022

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication....