Japan, Oct. 7 -- SHIN ETSU HANDOTAI CO LTD has got intellectual property rights for 'METHOD FOR MANUFACTURING 3C-SiC SINGLE CRYSTAL EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING 3C-SiC SELF-SUPPORTING SUBSTRATE, AND 3C-SiC SINGLE CRYSTAL EPITAXIAL SUBSTRATE.' Other related details are as follows:
Application Number: JP,2023-006762
Category (FI): C30B25/18,C30B33/02,C23C16/42,C30B29/36@A
Stage: Grant (IP right granted following substantive examination.)
Filing Date: Jan. 19, 2023
Publication Date: July 31, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication....