Japan Intellectual Property Rights: METHOD FOR IMPROVING OHMIC-CONTACT BEHAVIOUR BETWEEN CONTACT GRID AND EMITTER LAYER OF SILICON SOLAR CELL

Japan, Feb. 18 -- CE CELL ENGINEERING GMBH has got intellectual property rights for 'METHOD FOR IMPROVING OHMIC-CONTACT BEHAVIOUR BETWEEN CONTACT GRID AND EMITTER LAYER OF SILICON SOLAR CELL.' Other related details are as follows:

Application Number: JP,2023-101564

Category (FI): H01L21/268@E,H01L21/268@J,H01L21/26@F,H01L21/26@J,H01L31/04,260,H01L31/06,300,H10F10/00,H10F10/14,H10F71/00,100,H10F77/20,100,H10F77/20,120,H10P34/00@F,H10P34/00@J,H10P34/42@E,H10P34/42@J

Stage: Grant (IP right granted following substantive examination.)

Filing Date: June 21, 2023

Publication Date: Sept. 5, 2023

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication....