Japan, Sept. 18 -- LAM RESEARCH CORPORATION has got intellectual property rights for 'ALL-IN-ONE DRY DEVELOPMENT FOR METAL-CONTAINING PHOTORESIST.' Other related details are as follows:
Application Number: JP,2025-070054
Category (FI): H10P76/40,H01L21/30,569@H,H01L21/302,105@A,H10P76/00,569@H,H10P50/20,105@A,H10P50/26,H10P50/28,G03F7/36,G03F7/40,501
Stage: SOLUTION: To allow process condition management to facilitate the integration of dry development and post-development processing into a single process chamber, eliminating the need for a separate post-dry development bake step during semiconductor manufacturing, and perform thermal dry development and plasma dry development in the same chamber, and enable the operations of thermal dry...