MUMBAI, India, June 24 -- Intellectual Property India has published a patent application (202514089208 A) filed by Proasia Semiconductor Corporation on September 18, 2025, for Silicon Carbide Metal-Oxide-Semiconductor Fieldeffect Transistor And Manufacturing Method Thereof.
Inventors include Wang, Pei-Jen; and Huang, Pin-Yen.
The application for the patent was published on June 12, 2026, under issue no. 24/2026.
Abstract: The invention provides a method for manufacturing a silicon carbide metal-oxidesemiconductor field-effect transistor, which includes the following steps: providing a SiC substrate; forming an N-type SiC epitaxial layer with a top surface on the SiC substrate; forming two doped structures in the N-type SiC epitaxial laye...