Intellectual Property India Publishes Patent Application for Silicon Carbide-Based Composite Structure Having Good Vertical Electrical Conduction

MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202647114429 A) filed by Soitec; and Commissariat A L'Energie Atomique Et Aux Energies on September 24, 2026, for Silicon Carbide-Based Composite Structure Having Good Vertical Electrical Conduction.

Inventors include Le Cunff, Malle; Gaudin, Gweltaz; Roi, Jrmy; Gelineau, Guillaume; and Widiez, Julie.

The application for the patent was published on October 02, 2026, under issue no. 40/2026.

Abstract: The invention relates to a composite structure having a front face and a rear face extending parallel to a main plane, which structure comprises: - a useful layer of single-crystal silicon carbide, a free face of which constitutes the front face, which l...